Technical R&D Milestones

2010
  • 04 Developed antennas and tags for RFID
  • 06 Developed glass etching chemicals
2011
  • 03 Developed N+ wet etchant
  • 06 Completed ZAC development
  • 07 Developed a gel polymer electrolyte
2012
  • 06 Developed an improved Cu/Mo etchant
  • 06 Developed an improved N+ wet etchant
  • 12 Developed a BOE etchant
2013
  • 10 Developed a slurry for HPS
  • 12 Developed a laminated prism for Note
  • 12 Developed HSN R2.0 etchant
  • 12 Developed APE etchant
  • 12 Developed SPAN etchant
2014
  • 04 Developed a glass edge grinding wheel
  • 04 Developed an Ag paste for TSP bezel electrodes
  • 08 Developed a Cu etchant for LCD (for micropatterning / new pixels)
  • 12 Developed a silver nano wire coating agent for transparent electrodes
  • 12 Developed a laminated prism for tablets
2015
  • 01 Developed a new PXL etchant for LCD
  • 02 Developed a Cu etchant for OLED low taper
  • 06 Developed a new BOE etchant
  • 07 Developed a new Cu etchant for LCD
  • 07 Developed a Glare Pol. laminated prism
  • 09 Developed WEA 2.0
2016
  • 01 Developed an ITO etchant for touch panel
  • 02 Developed a slurry for W touch
  • 06 Developed a metal etchant for solar cells
  • 07 Developed a high brightness laminated prism for notebooks
  • 09 Developed a slurry for TSV process
2017
  • 10 Developed an electrolyte composition for medium-large type batteries
2018
  • 09 Developed a DRAM capacitor precursor
2019
  • 08 Developed Etchant for 3nm Logic
2020
  • 06 Developed Poly buffing slurry
2001
  • 08 Developed MoW etchant
  • 09 Developed metal CMP
  • 10 Developed Cu/Ti etchant
2002
  • 11 Developed ILD slurry
  • 12 Completed building of the Manufacturing Technology R&D Center (Gongju)
2003
  • 11 Developed Cr etchant for LCD
  • 11 Developed Cu/Mo etchant
2004
  • 02 Developed IZO etchant
2005
  • 04 Established Yong-in R&D Center
  • 04 Developed W cleaning agent
  • 08 Developed an improved Cu/Mo etchant
2006
  • 01 Made the world’s first Al etchant waste facility for production of regenerated phosphoric acid
2007
  • 03 Developed LSW slurry
  • 11 Developed a copper-polishing slurry
2008
  • 10 Developed a glass manufacture method for combining TFT plates and color filter plates
2009
  • 08 Developed an Si etchant for wafer thinning
  • 08 Developed an RFID inlay for book management
  • 10 Developed an improved phosphoric acid (HSN) etchant
1994
  • 09 Established a corporate R&D center (Korea Industrial Technology Association)
1998
  • 06 Conducted a technology innovation task directed by the Small and Medium Business Administration entitled, “MOCVD Source for next-generation semiconductors”